Vertically stacking self-assembled quantum wires
Identifieur interne : 00DF60 ( Main/Repository ); précédent : 00DF59; suivant : 00DF61Vertically stacking self-assembled quantum wires
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Abstract
Self-assembled InP/InAs/InP quantum wires (QWRs) have been stacked for ten vertical periods and characterized based on photoluminescence (PL) studies. Compared with single-period QWRs, behaviors in the PL spectra and some fundamental effects have been observed. Through the detailed analyses of the PL shapes, linewidths, and polarizations at different pump wavelengths, pump intensities, and sample temperatures, it is evidenced that the wire width and subband energy gradually decrease while the average wire thickness increases from the bottom period to the top one, period by period. Meanwhile, the average wire width gradually decreases. Following these results, growth conditions have been suggested, which can be essential to improving the optical quality of these self-assembled QWRs. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Vertically stacking self-assembled quantum wires</title><author><name sortKey="Mu, Xiaodong" uniqKey="Mu X">Xiaodong Mu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Lehigh University, Bethlehem</wicri:cityArea></affiliation></author><author><name sortKey="Ding, Yujie J" uniqKey="Ding Y">Yujie J. Ding</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Lehigh University, Bethlehem</wicri:cityArea></affiliation></author><author><name sortKey="Yang, Haeyeon" uniqKey="Yang H">Haeyeon Yang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Salamo, Gregory J" uniqKey="Salamo G">Gregory J. Salamo</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0393535</idno><date when="2002-08-05">2002-08-05</date><idno type="stanalyst">PASCAL 02-0393535 AIP</idno><idno type="RBID">Pascal:02-0393535</idno><idno type="wicri:Area/Main/Corpus">00ED55</idno><idno type="wicri:Area/Main/Repository">00DF60</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Self-assembly</term><term>Semiconductor epitaxial layers</term><term>Semiconductor quantum wires</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>6865L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Fil quantique semiconducteur</term><term>Autoassemblage</term><term>Photoluminescence</term><term>Couche épitaxique semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Self-assembled InP/InAs/InP quantum wires (QWRs) have been stacked for ten vertical periods and characterized based on photoluminescence (PL) studies. Compared with single-period QWRs, behaviors in the PL spectra and some fundamental effects have been observed. Through the detailed analyses of the PL shapes, linewidths, and polarizations at different pump wavelengths, pump intensities, and sample temperatures, it is evidenced that the wire width and subband energy gradually decrease while the average wire thickness increases from the bottom period to the top one, period by period. Meanwhile, the average wire width gradually decreases. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0393535</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Self-assembled InP/InAs/InP quantum wires (QWRs) have been stacked for ten vertical periods and characterized based on photoluminescence (PL) studies. Compared with single-period QWRs, behaviors in the PL spectra and some fundamental effects have been observed. Through the detailed analyses of the PL shapes, linewidths, and polarizations at different pump wavelengths, pump intensities, and sample temperatures, it is evidenced that the wire width and subband energy gradually decrease while the average wire thickness increases from the bottom period to the top one, period by period. Meanwhile, the average wire width gradually decreases. 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